A base resistance controlled thyristor with the self-align corrugated p-base

A new base resistance controlled thyristor with the self-aligned corrugated p-base, entitled CB-BRT, is proposed and fabricated in order to suppress the snapback phenomenon and to increase the maximum controllable current. The corrugated p-base is formed by self-aligned boron diffusion using the gate polysilicon as a mask. The new device reduces the snapback effectively by decreasing the latching current without sacrificing the forward voltage. The regenerative thyristor action is suppressed during the turn-off period so that the maximum controllable current increases in the CB-BRT