Defect isolation and characterization in contact array/chain structures by using voltage contrast effect

Voltage contrast effect measurement, a conventional technique for isolating open contacts, was applied to high-resistance contact isolation. The detectable lower limit was clarified experimentally and theoretically. The passive voltage contrast effect is a transitional phenomenon, so the analysis conditions must be optimized for the device properties and primary beam irradiation. The detectable lower resistance limit was 1E9 Ω at most. The biased voltage contrast effect is steady state, so it could be used to isolate failed via modules whose resistance was 1E4-1E5 Ω, even when the current of the primary beam was small