A millimeter wave active load-pull measurement system

Author

Ghannouchi, Fadhel M. ; Bosisio, Renato G.

Author_Institution

Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada

fYear

1992

fDate

12-14 May 1992

Firstpage

395

Lastpage

398

Abstract

A millimeter wave active load-pull measurement system for large signal characterization of millimeter wave transistors is presented. The characterization system uses two six-port junctions for simultaneous impedance and power flow measurements. The advantages of the proposed measurement system are summarized. Large signal characterization of a GaAs FET at 28 GHz in terms of constant absorbed power contours, constant operating gain contours, and constant DC drain current contours in the complex Γ_L plane are presented

Keywords

electric impedance measurement; field effect transistors; microwave reflectometry; power measurement; power transistors; solid-state microwave devices; 28 GHz; FET; GaAs; active load-pull measurement system; constant DC drain current contours; constant absorbed power contours; constant operating gain contours; impedance measurement; large signal characterization; microwave transistors; millimeter wave transistors; power amplifiers; power flow measurements; simultaneous measurement; six-port junctions; Envelope detectors; Fluid flow measurement; Frequency; Impedance measurement; Load flow; Microwave FETs; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 1992. IMTC '92., 9th IEEE

Conference_Location

Metropolitan, NY

Print_ISBN

0-7803-0640-6

Type

conf

DOI

10.1109/IMTC.1992.245110

Filename

245110