A new gas circulation RIE

Author

Ohiwa, Tokuliisa ; Sakai, Itsukii ; Okumura, Katsuya

Author_Institution

Microelectron. Eng. Labs., Toshiba Corp., Yokohama, Japan

fYear

1999

fDate

1999

Firstpage

259

Lastpage

262

Abstract

A new gas circulation RIE has been developed. It pumps the exhausted gas still containing usable process gas into the RIE process chamber to be reused. This new gas circulation RIE showed equivalent etching performances of etch rate, selectivity to Si, etching profile, and uniformity in C₄F₈/CO/Ar contact hole etching process compared to the conventional process, with 50% less C₄F₈ and 80% less CO and Ar, of the original input gas flow rates. The reduction of the use of per-fluoro compound (PFC) and other process gases is effective for the suppression of the greenhouse problem and etching process cost

Keywords

air pollution; integrated circuit manufacture; large scale integration; sputter etching; contact hole etching process; equivalent etching performances; etch rate; etching profile; gas circulation RIE; greenhouse problem; process cost; process gases; uniformity; usable process gas; Costs; Etching; Fabrication; Global warming; Large scale integration; Microelectronics; Plasma applications; Power engineering and energy; Semiconductor films; Thigh;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

0-7803-5403-6

Type

conf

DOI

10.1109/ISSM.1999.808785

Filename

808785