DocumentCode
3368286
Title
High-throughput low temperature tungsten deposition process for 0.25 μm technology
Author
Elst, W. ; Van Zomeren, A. ; Berenbaum, D. ; Roede, H. ; Schmitz, J. ; Ellwanger, R.
Author_Institution
MOS4YOU Dept., Philips Semicond., Nijmegen, Netherlands
fYear
1999
fDate
1999
Firstpage
427
Lastpage
428
Abstract
A new high-throughput, low temperature tungsten deposition process is presented. Excellent step coverage is obtained because of the low temperature and high pressure. No plug seams are observed. Therefore, this process is particularly suitable for post W-CMP processing, as plug seam attack will be minimal. Electrical measurements have demonstrated that this new process has the same process capability in terms of electrical performance and yield
Keywords
chemical vapour deposition; integrated circuit manufacture; integrated circuit metallisation; tungsten; 0.25 micron; 300 torr; 425 C; W; high pressure process; high-throughput deposition process; low temperature W deposition process; post W-CMP processing; step coverage; Large Hadron Collider; Optical films; Optical microscopy; Plugs; Pollution measurement; Scanning electron microscopy; Semiconductor materials; Stress measurement; Temperature; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
0-7803-5403-6
Type
conf
DOI
10.1109/ISSM.1999.808827
Filename
808827
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