The development of batch type low pressure spin dryer for water mark-less wafers

Author

Maeda, Kazuaki ; Okuchi, H. ; Nadahara, Soichi ; Okumura, Katsuya ; Muraoka, Yusuke

Author_Institution

EBARA Corp., Toshiba Corp., Japan

fYear

1999

fDate

1999

Firstpage

449

Lastpage

452

Abstract

We developed a novel spin dryer, which is equipped with high speed rotation capability and a low pressure N₂ purging system, to realize a water mark free surface. Water marks which remained on the Si wafer surface were made by chemical reaction of Si, O₂, and H ₂O during spin drying. In this paper, two experimental approaches: (1) to remove O₂ from the reaction elements; and (2) to minimize reaction time, were demonstrated. The low pressure, high speed spin dryer with shower rinsing suppressed water marks significantly, i.e. only 500 ppm, compared with that of a conventional one

Keywords

drying; integrated circuit manufacture; silicon; surface treatment; H₂O; N₂; O₂; O₂ removal; Si; Si wafer surface; batch type spin dryer; high speed rotation capability; low pressure N₂ purging system; low pressure spin dryer; reaction time minimisation; shower rinsing; water mark free surface; water mark-less wafers; Chemical elements; Cleaning; Contamination; Control systems; Pressure control; Servomechanisms; Servomotors; Silicon; Temperature control; Water pollution;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

0-7803-5403-6

Type

conf

DOI

10.1109/ISSM.1999.808833

Filename

808833