1.3-μm laser diode with a high-quality C-doped InAlAs

Author

Kurihara, K. ; Arai, N. ; Ueda, Ryosuke ; Takashima, M. ; Sakata, K. ; Takahara, M. ; Shimoyama, K.

Author_Institution

Optoelectronics Lab., Mitsubishi Chem. Corp., Ibaraki, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

40

Lastpage

43

Abstract

Carbon doping is a promising technique for making p-type layers of InAlGaAs material systems, because of its low diffusion characteristics. We have already achieved the carbon doping with low oxygen contamination. However, in the growth procedure, we used preferably low growth temperature. In this paper, we have investigated phase separation in InAlAs and growth conditions for carbon doping at higher temperatures. Through measurements of the laser characteristics, we confirmed that a carbon-doped InAlAs layer, which does not show phase separation, has superior quality to a zinc-doped layer.

Keywords

III-V semiconductors; aluminium compounds; carbon; indium compounds; optical fabrication; optical materials; phase separation; semiconductor doping; semiconductor growth; semiconductor lasers; 1.3 mum; InAlAs:C; carbon doping; diffusion characteristics; laser characteristics; laser diode; oxygen contamination; phase separation; zinc-doped layer; Atomic measurements; Chemical technology; Contamination; Diode lasers; Doping; Indium compounds; Organic materials; Phase measurement; Pollution measurement; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442606

Filename

1442606