Low threshold operation of MOCVD grown 1.3 μm range GaInNAs triple quantum-well lasers with low N content GaNAs barrier layers

Author

Kaminishi, M. ; Sato, S. ; Takahashi, T. ; Satoh, S.

Author_Institution

Res. & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

52

Lastpage

55

Abstract

GaInNAs TQW lasers with different barrier materials grown by MOCVD were fabricated to evaluate their characteristics. It was confirmed that the J_th of the lasers with N containing barriers was lower than that of lasers with no N containing barriers. The lowest J_th have been realized with GaAsN (N:0.27 and 0.8%) barriers in GaInNAs lasers. The very low J_th of 120 A/cm²/well for 1.27 μm laser grown with optimized growth condition have been realized with low N containing GaNAs barriers.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; optical fabrication; optimisation; quantum well lasers; semiconductor growth; 1.27 mum; 1.3 mum; GaInNAs-GaAsN; MOCVD; barrier layers; low threshold operation; stripe laser; threshold current density; triple quantum-well lasers; Capacitive sensors; Chemical lasers; Crystalline materials; Crystallization; Gallium arsenide; Inorganic materials; MOCVD; Optical materials; Quantum well lasers; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442609

Filename

1442609