GaAs-InAs short-period superlattice/InP(411)A self-formed quantum dot light emitting diodes with 1.3-1.5 μm light emission

(GaAs)₂(InAs)_n short period superlattices (SLs) are grown on InP [411]A substrates by gas source molecular beam epitaxy. Scanning tunneling microscopy study reveals that the quantum dot (QD) structures are self-formed with a lateral density of ∼10¹¹ cm^-2. Multi-layer QD structures sandwiched with InP barrier layers exhibit a strong photoluminescence emission. The 1.3-1.6 μm wavelength emission is easily obtained and precisely controlled by regulating the SL period as well as the InAs monolayer number (layer thickness). We also fabricate the light emitting diodes. Clear 1.3 μm and 1.5 μm wavelength electroluminescence (EL) emissions were observed by changing the SL period. Furthermore, the decrease of EL intensity from 77 K to 300 K is only a factor of 0.1.