• DocumentCode
    3369355
  • Title

    Excellent silicon thickness uniformity on Ultra-Thin SOI for controlling Vt variation of FDSOI

  • Author

    Schwarzenbach, W. ; Cauchy, X. ; Boedt, F. ; Bonnin, O. ; Butaud, E. ; Girard, C. ; Nguyen, B.-Y. ; Mazure, C. ; Maleville, C.

  • Author_Institution
    SOITEC, Parc Technol. des Fontaines, Crolles, France
  • fYear
    2011
  • fDate
    2-4 May 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Thickness uniformity of the Ultra Thin SOI (UTSOI) substrates is one of the key criteria to control Vt variation of the planar FDSOI devices. We present an evolutionary approach to SmartCut™ technology which already allows achieving a maximum total SOI layer thickness variation of less than ± 10 Å on preproduction volume. Total thickness variation of ± 5 Å is targeted.
  • Keywords
    elemental semiconductors; silicon; silicon-on-insulator; FDSOI; SmartCut technology; silicon thickness uniformity; ultrathin SOI substrates; CMOS integrated circuits; CMOS technology; Fluctuations; Production; Silicon; Substrates; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IC Design & Technology (ICICDT), 2011 IEEE International Conference on
  • Conference_Location
    Kaohsiung
  • ISSN
    Pending
  • Print_ISBN
    978-1-4244-9019-6
  • Type

    conf

  • DOI
    10.1109/ICICDT.2011.5783188
  • Filename
    5783188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3369355