Title :
1.3-μm spot size converter integrated laser diode with conventional buried-heterostructure laser process
Author :
Sim, Jae-Sik ; Kim, Ki-Soo ; Lee, Dong-Hun ; Baek, Yong-Soon
Author_Institution :
ETRI, Daejeon, South Korea
fDate :
31 May-4 June 2004
Abstract :
A 1.3-μm spot size converter integrated laser diode is demonstrated with conventional buried heterostructure laser process. For the spot size converter, we employed a double waveguide structure in which a ridge-based passive waveguide was incorporated. The passive waveguide was optically combined with a laterally tapered active waveguide to control mode size. The threshold current was measured to be 3 mA together with high slope efficiency of 0.30 W/A. The beam divergence angles in the horizontal and vertical directions were as small as 7.9° and 12.5°, respectively.
Keywords :
integrated optics; integrated optoelectronics; laser modes; optical fabrication; optical waveguides; ridge waveguides; semiconductor lasers; 1.3 mum; 3 mA; buried-heterostructure laser process; double waveguide structure; laterally tapered active waveguide; ridge-based passive waveguide; slope efficiency; spot size converter integrated laser diode; threshold current; Costs; Diode lasers; Laser modes; Optical coupling; Optical device fabrication; Optical devices; Optical waveguides; Packaging; Waveguide lasers; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442653
