Fabrication of mesa-type InGaAs pin PDs with InP passivation structure on 4-inch diameter InP substrate

We have successfully fabricated mesa-type InGaAs pin PDs with an InP passivation structure on a 4-inch diameter InP substrate. The dark current and capacitance of PDs with 80-μm mesa diameter are 0.278 nA and 335 fF at a reverse bias voltage of 5 V, respectively. A responsivity is 0.91 A/W at an incident light wavelength of 1310 nm. A 3-dB bandwidth for PDs with 80-μm mesa diameter is 7.98 GHz at a reverse bias voltage of 5 V and an incident light wavelength of 1550 nm. The results show that the pin PDs on a 4-inch diameter InP substrate have sufficient characteristics for practical applications.