• DocumentCode
    3369718
  • Title

    Parasitic-free study of carrier transport in asymmetric 1.55 μm MQW laser structures

  • Author

    Zimmermann, M. ; Krämer, S. ; Steinhagen, F. ; Hillmer, Hartmut ; Burkhard, H. ; Hangleiter, A.

  • Author_Institution
    4. Phys. Inst., Stuttgart Univ., Germany
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    Carrier transport is supposed to be one of the major limiting processes for the high speed dynamics of SCH-MQW laser structures. It contributes to gain compression in addition to phenomena like spectral holeburning or carrier heating. The carrier transport effect also shows its influence in an RC-like rolloff of the high frequency response of laser devices. This reduction in bandwidth has been studied in the past to overcome transport problems in finding the appropriate structure, It has been proposed that it is mostly the slow transport of the heavier holes which limits the laser bandwidth. In this paper we have studied the phenomenon of carrier transport by investigating two asymmetric confined laser structures, using a parasitic-free optical modulation method. This made it possible to measure the apparent carrier transport time not only in total but for each side of the confinement layer. Finally we result in a diffusion constant for the barrier/confinement carriers in InGaAlAs material which is in good agreement with reported mobilities
  • Keywords
    Fabry-Perot resonators; III-V semiconductors; aluminium compounds; carrier lifetime; carrier mobility; gallium arsenide; high-speed optical techniques; indium compounds; nonlinear optics; optical hole burning; optical modulation; optical pulse compression; quantum well lasers; 1.55 mum; InGaAlAs; InGaAlAs material; InGaAs-InGaAlAs; MQW laser structures; RC-like rolloff; SCH-MQW laser structures; apparent carrier transport time; asymmetric confined laser structures; bandwidth; barrier/confinement carriers; carrier heating; carrier transport; confinement layer; diffusion constant; gain compression; heavier holes; high frequency response; high speed dynamics; laser bandwidth; laser devices; parasitic-free optical modulation method; parasitic-free study; spectral holeburning; Bandwidth; Carrier confinement; Frequency response; Heating; Laser excitation; Optical modulation; Optical pulses; Pulse measurements; Quantum well devices; Quantum well lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491963
  • Filename
    491963