DocumentCode
3369718
Title
Parasitic-free study of carrier transport in asymmetric 1.55 μm MQW laser structures
Author
Zimmermann, M. ; Krämer, S. ; Steinhagen, F. ; Hillmer, Hartmut ; Burkhard, H. ; Hangleiter, A.
Author_Institution
4. Phys. Inst., Stuttgart Univ., Germany
fYear
1996
fDate
21-25 Apr 1996
Firstpage
169
Lastpage
172
Abstract
Carrier transport is supposed to be one of the major limiting processes for the high speed dynamics of SCH-MQW laser structures. It contributes to gain compression in addition to phenomena like spectral holeburning or carrier heating. The carrier transport effect also shows its influence in an RC-like rolloff of the high frequency response of laser devices. This reduction in bandwidth has been studied in the past to overcome transport problems in finding the appropriate structure, It has been proposed that it is mostly the slow transport of the heavier holes which limits the laser bandwidth. In this paper we have studied the phenomenon of carrier transport by investigating two asymmetric confined laser structures, using a parasitic-free optical modulation method. This made it possible to measure the apparent carrier transport time not only in total but for each side of the confinement layer. Finally we result in a diffusion constant for the barrier/confinement carriers in InGaAlAs material which is in good agreement with reported mobilities
Keywords
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; carrier lifetime; carrier mobility; gallium arsenide; high-speed optical techniques; indium compounds; nonlinear optics; optical hole burning; optical modulation; optical pulse compression; quantum well lasers; 1.55 mum; InGaAlAs; InGaAlAs material; InGaAs-InGaAlAs; MQW laser structures; RC-like rolloff; SCH-MQW laser structures; apparent carrier transport time; asymmetric confined laser structures; bandwidth; barrier/confinement carriers; carrier heating; carrier transport; confinement layer; diffusion constant; gain compression; heavier holes; high frequency response; high speed dynamics; laser bandwidth; laser devices; parasitic-free optical modulation method; parasitic-free study; spectral holeburning; Bandwidth; Carrier confinement; Frequency response; Heating; Laser excitation; Optical modulation; Optical pulses; Pulse measurements; Quantum well devices; Quantum well lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.491963
Filename
491963
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