A study on corbino a-IGZO TFTs with different bending curvatures for flexible electronics

Author

Wan-Chen Huang ; Shuo-Yang Sun ; Chun-Cheng Cheng ; Chu-Yu Liu ; Min-Feng Chiang

Author_Institution

Adv. Technol. Res. Center, AU Optronics Corp., Hsinchu, Taiwan

fYear

2015

fDate

1-4 July 2015

Firstpage

119

Lastpage

122

Abstract

The Island-Stop a-IGZO Thin Film Transistors (TFTs) with the corbino architecture were demonstrated on plastic substrates. The highest annealed temperature of the process was controlled at 220 °C. The electrical characteristics of corbino a-IGZO TFTs were measured under the compressive strain down to the bending radius of 10 mm. And two kinds of bending directions including parallel and perpendicular to the channel were performed. Finally, the influences of mechanical strains on the threshold voltage and the negative bias stress (NBS) of these devices were recorded.

Keywords

amorphous semiconductors; annealing; flexible electronics; gallium compounds; indium compounds; thin film transistors; zinc compounds; InGaZnO; annealed temperature; bending curvatures; compressive strain; corbino a-IGZO TFT; corbino architecture; electrical characteristics; flexible electronics; island-stop a-IGZO thin film transistors; mechanical strains; negative bias stress; plastic substrates; temperature 220 degC; Indium; Integrated circuits; Passivation; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2015.7173214

Filename

7173214