Title :
A study on corbino a-IGZO TFTs with different bending curvatures for flexible electronics
Author :
Wan-Chen Huang ; Shuo-Yang Sun ; Chun-Cheng Cheng ; Chu-Yu Liu ; Min-Feng Chiang
Author_Institution :
Adv. Technol. Res. Center, AU Optronics Corp., Hsinchu, Taiwan
Abstract :
The Island-Stop a-IGZO Thin Film Transistors (TFTs) with the corbino architecture were demonstrated on plastic substrates. The highest annealed temperature of the process was controlled at 220 °C. The electrical characteristics of corbino a-IGZO TFTs were measured under the compressive strain down to the bending radius of 10 mm. And two kinds of bending directions including parallel and perpendicular to the channel were performed. Finally, the influences of mechanical strains on the threshold voltage and the negative bias stress (NBS) of these devices were recorded.
Keywords :
amorphous semiconductors; annealing; flexible electronics; gallium compounds; indium compounds; thin film transistors; zinc compounds; InGaZnO; annealed temperature; bending curvatures; compressive strain; corbino a-IGZO TFT; corbino architecture; electrical characteristics; flexible electronics; island-stop a-IGZO thin film transistors; mechanical strains; negative bias stress; plastic substrates; temperature 220 degC; Indium; Integrated circuits; Passivation; Strain;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2015.7173214
