DocumentCode
3370151
Title
Effect of trench-sidewall smoothing on on-state voltage of injection enhancement gate transistor
Author
Yahata, Akihiro ; Urano, Satoshi ; Inoue, Tomoki ; Shinohe, Takashi
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1998
fDate
3-6 Jun 1998
Firstpage
273
Lastpage
276
Abstract
We determined the optimum condition to smooth the roughness of the trench sidewall and this condition was applied to the fabrication of the injection enhancement gate transistor (IEGT). The on-state voltage was drastically decreased by smoothing the trench sidewall
Keywords
insulated gate bipolar transistors; power bipolar transistors; semiconductor device testing; sputter etching; surface topography; IEGT; injection enhancement gate transistor; injection enhancement gate transistor fabrication; on-state voltage; optimum sidewall smoothing conditions; reactive ion etching; trench sidewall; trench sidewall roughness; trench-sidewall smoothing effect; Etching; Fabrication; Gases; Resists; Rough surfaces; Smoothing methods; Surface roughness; Thyristors; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location
Kyoto
ISSN
1063-6854
Print_ISBN
0-7803-4752-8
Type
conf
DOI
10.1109/ISPSD.1998.702686
Filename
702686
Link To Document