InGaAs/InGaAs tensile-strained-barrier MQW structures for optical amplifiers

Author

Cinguino, P. ; Dovio, E. ; Fornuto, G. ; Martinez, F. ; Paputta, C. ; Pastorino, P. ; Piccirillo, A. ; Re, D. ; Soldani, D. ; Taiariol, F.

Author_Institution

CSELT, Torino, Italy

fYear

1996

fDate

21-25 Apr 1996

Firstpage

184

Lastpage

187

Abstract

The use of an InGaAs/InGaAs tensile-strained-barrier MQW active layer is an interesting approach to achieve polarization-insensitive semiconductor optical amplifiers (SOAs) at the 1.55 μm wavelength. This work reports on the design and experimental results obtained on MQW structures grown by LP-MOCVD and characterized for their optical and structural quality. SOA devices made from these layers show a dichroism below 1 dB with signal fiber-to-fiber gains up to 20 dB, confirming the good optical and electrical quality of the structure

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 1.55 mum; 20 dB; InGaAs; InGaAs-InGaAs; InGaAs/InGaAs; LP-MOCVD; MQW active layer; dichroism; electrical quality; optical amplifiers; optical quality; polarization-insensitive semiconductor optical amplifiers; signal fiber-to-fiber gains; structural quality; tensile-strained-barrier MQW structures; Capacitive sensors; Indium gallium arsenide; Optical amplifiers; Optical design; Optical fiber polarization; Optical sensors; Optical wavelength conversion; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491967

Filename

491967