Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes with Pd/GaAs Schottky collector

Author

Fukumitsu, M. ; Asaoka, N. ; Suhara, M. ; Okumura, T.

Author_Institution

Dept. of Electr. Eng., Tokyo Metropolitan Univ., Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

265

Lastpage

267

Abstract

We fabricated GalnP/GaAs Schottky-collector triple barrier resonant tunneling diodes (TBRTDs), and evaluated a differential series parasitic resistance towards a series resistance reduction for high frequency self-oscillation on the basis of negative differential resistance. By employing a Pd/GaAs Schottky junction as the collector electrode, the series resistance reduction was carried out as compared with PdGe ohmic-collector TBRTDs fabricated with the same wafer.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; electrodes; gallium arsenide; gallium compounds; indium compounds; negative resistance; palladium; resonant tunnelling diodes; GaInP-GaAs; Pd-GaAs; Schottky collector; Schottky junction; differential series parasitic resistance; negative differential resistance; ohmic-collector; self-oscillation; triple barrier resonant tunneling diodes; Electric resistance; Electrodes; Fabrication; Frequency; Gallium arsenide; Oscillators; Resonant tunneling devices; Schottky diodes; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442702

Filename

1442702