Title :
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs
Author :
Cesca, T. ; Gasparotto, A. ; Verna, A. ; Fraboni, B. ; Priolo, F. ; Tarricone, L. ; Rampino, S. ; Longo, M.
Author_Institution :
Dept. of Phys., Padova Univ., Italy
fDate :
31 May-4 June 2004
Abstract :
Single GaInP layers, grown by MOVPE lattice matched to GaAs are examined. The role of the implantation temperature and dose in determining the crystal damage, and the recovery of this damage by the following high temperature annealing treatments is investigated by RBS-channeling measurements. The influence of implant and annealing conditions on the redistribution properties of the Fe atoms throughout the crystal is studied by means of SIMS Fe depth profiling. High-resolution X-ray diffraction measurements are employed for structural characterization. The electrical properties related to Fe implantation are studied by current-voltage measurements on mesa devices. Deep level properties are investigated by DLTS-PICTS measurements.
Keywords :
III-V semiconductors; MOCVD; Rutherford backscattering; X-ray diffraction; annealing; crystal structure; deep level transient spectroscopy; deep levels; gallium arsenide; gallium compounds; impurities; iron; secondary ion mass spectra; vapour phase epitaxial growth; DLTS-PICTS measurements; GaInP:Fe-GaAs; MOVPE; RBS-channeling measurements; SIMS Fe depth profiling; annealing; crystal damage; current-voltage measurements; deep level properties; high-resolution X-ray diffraction; implantation temperature; Annealing; Atomic measurements; Epitaxial growth; Epitaxial layers; Gallium arsenide; Implants; Iron; Lattices; Temperature; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442705
