Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs

Author

Cesca, T. ; Gasparotto, A. ; Verna, A. ; Fraboni, B. ; Priolo, F. ; Tarricone, L. ; Rampino, S. ; Longo, M.

Author_Institution

Dept. of Phys., Padova Univ., Italy

fYear

2004

fDate

31 May-4 June 2004

Firstpage

276

Lastpage

277

Abstract

Single GaInP layers, grown by MOVPE lattice matched to GaAs are examined. The role of the implantation temperature and dose in determining the crystal damage, and the recovery of this damage by the following high temperature annealing treatments is investigated by RBS-channeling measurements. The influence of implant and annealing conditions on the redistribution properties of the Fe atoms throughout the crystal is studied by means of SIMS Fe depth profiling. High-resolution X-ray diffraction measurements are employed for structural characterization. The electrical properties related to Fe implantation are studied by current-voltage measurements on mesa devices. Deep level properties are investigated by DLTS-PICTS measurements.

Keywords

III-V semiconductors; MOCVD; Rutherford backscattering; X-ray diffraction; annealing; crystal structure; deep level transient spectroscopy; deep levels; gallium arsenide; gallium compounds; impurities; iron; secondary ion mass spectra; vapour phase epitaxial growth; DLTS-PICTS measurements; GaInP:Fe-GaAs; MOVPE; RBS-channeling measurements; SIMS Fe depth profiling; annealing; crystal damage; current-voltage measurements; deep level properties; high-resolution X-ray diffraction; implantation temperature; Annealing; Atomic measurements; Epitaxial growth; Epitaxial layers; Gallium arsenide; Implants; Iron; Lattices; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442705

Filename

1442705