DocumentCode :
3370863
Title :
High performance 50 nm T-Gate In0.52Al0.48As/In0.70Ga0.30As pseudomorphic high electron mobility transistors
Author :
Cao, Xin ; Thorns, S. ; McLelland, Helen ; Elgaid, Khaled ; Stanley, Colin ; Thayne, Iain
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
292
Lastpage :
294
Abstract :
50 nm T-gates InP pHEMTs with 70% indium channel were fabricated using a novel UVIII/LOR/PMMA resist stack e-beam lithograph and using a "digital" gate recess technology. The initial devices exhibited a gm of 1400 mS/mm and an ft of 420 GHz. A very high DC yield was also achieved.
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; etching; gallium arsenide; high electron mobility transistors; indium compounds; 420 GHz; 50 nm; In0.52Al0.48As-In0.70Ga0.30As; UVIII-LOR-PMMA resist stack e-beam lithograph; digital gate recess technology; indium channel; pHEMT; pseudomorphic high electron mobility transistors; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lithography; MODFETs; Metallization; PHEMTs; Resists; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442712
Filename :
1442712
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3370863
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