Towards realization of high quality 2D-photonic crystals in InP/GalnAsP/InP

Author

Anand, S. ; Mulot, M. ; Berrier, A. ; Ferrini, R. ; Houdre, R. ; Kamp, M. ; Forchel, A.

Author_Institution

Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden

fYear

2004

fDate

31 May-4 June 2004

Firstpage

311

Lastpage

313

Abstract

Two-dimensional photonic crystals (PhCs) were etched into InP/GaInAsP/InP planar waveguides using chlorine based chemical assisted ion beam etching (CAIBE). Etching mechanisms and process parameters crucial for high quality PhC definition are discussed, with special attention to the lag-effect. The processed PhCs were optically characterized by measuring transmission through simple slabs and one-dimensional cavities. The optical properties inside the photonic bandgap are much better compared to both previously reported CAIBE results and results obtained with other etching methods. In particular, we measured a record quality factor of 310 for one-dimensional cavities fabricated in this material system.

Keywords

III-V semiconductors; Q-factor; etching; gallium arsenide; gallium compounds; indium compounds; optical fabrication; optical planar waveguides; photonic band gap; photonic crystals; 2D-photonic crystals; InP-GaInAsP-InP; chlorine based chemical assisted ion beam etching; photonic bandgap; planar waveguides; quality factor; two-dimensional photonic crystals; Chemicals; Etching; Indium phosphide; Ion beams; Optical planar waveguides; Optical recording; Optical waveguides; Particle beam optics; Photonic crystals; Planar waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442717

Filename

1442717