DocumentCode
3370993
Title
The study of diffusion barrier layer TiN in Cu/TiN/TiSi2/Si contact system
Author
Chang, Tzong-Sheng ; Wang, Wen-Churl ; Huang, Fon-Shan
Author_Institution
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
1995
fDate
31 May-2 Jun 1995
Firstpage
185
Lastpage
189
Abstract
A comparative study of rapid thermal nitridation (RTN) of Ti, reactively-ion-sputtered (RIS), and low pressure chemical-vapor-deposited (LPCVD) TiN thin films as diffusion barriers for Cu/TiN/TiSi2/n+Si contact system has been done. The properties of TiN films were investigated by sheet resistance measurement, X-ray diffraction analysis (XRD), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). The thermal stability of Cu/TiN/TiSi2/n+Si contact system was studied by diode leakage current and contact resistance measurements. The leakage current measurements did not show deterioration of n+ -p diode junction up to 475°C for the RTN and LPCVD TiN diffusion barriers. The RIS TiN film was stable up to 450°C for 30 minutes only, after which Cu started to diffuse into the n+Si substrate. The reasons for the higher thermal stability of RTN and LPCVD TiN compared to RIS TiN can be deduced from the microstructural differences in the three TiN films
Keywords
Auger effect; VLSI; X-ray diffraction; X-ray photoelectron spectra; chemical vapour deposition; contact resistance; copper; diffusion barriers; elemental semiconductors; integrated circuit measurement; integrated circuit metallisation; leakage currents; nitridation; rapid thermal processing; silicon; sputter deposition; titanium compounds; 0 to 475 degC; 30 min; Auger electron spectroscopy; Cu-TiN-TiSi2-Si; Si; X-ray diffraction analysis; X-ray photoelectron spectroscopy; chemical-vapor-deposited thin films; contact resistance measurements; diffusion barrier layer; diode leakage current; microstructural differences; n+-p diode junction; rapid thermal nitridation; reactively-ion-sputtered thin films; sheet resistance measurement; thermal stability; Chemicals; Current measurement; Diodes; Electrical resistance measurement; Leakage current; Semiconductor thin films; Spectroscopy; Thermal stability; Tin; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-2773-X
Type
conf
DOI
10.1109/VTSA.1995.524660
Filename
524660
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