DocumentCode
33710
Title
An efficient page replacement algorithm for NAND flash memory
Author
Mingwei Lin ; Shuyu Chen ; Zhen Zhou
Author_Institution
Coll. of Comput. Sci., Chongqing Univ., Chongqing, China
Volume
59
Issue
4
fYear
2013
fDate
Nov-13
Firstpage
779
Lastpage
785
Abstract
An efficient page replacement algorithm, which is named EPRA and customized for different kinds of NAND flash memories with different cost ratios of write operation to read operation, is proposed in this paper. Each dirty victim page candidate within the main memory is divided into a fixed number of flash pages. EPRA assigns a weighted value to each victim page candidate and selects a victim page candidate that has the least weighted value as a victim page. The elapsed time of each dirty flash page since the most recent reference is used to classify the dirty flash pages within the dirty victim page into the hot dirty flash pages and cold ones. When a dirty victim page is selected, EPRA only writes the dirty flash pages within the victim page back to NAND flash memory by separating the hot dirty flash pages from the cold ones and writing them to different free blocks within the NAND flash memory. Trace-driven simulations show that the proposed EPRA algorithm is superior to existing page replacement algorithms when they are performed on different kinds of NAND flash memories.
Keywords
NAND circuits; flash memories; NAND flash memory; dirty flash pages; dirty victim page candidate; efficient page replacement algorithm; free blocks; trace driven simulations; Algorithm design and analysis; Consumer electronics; Flash memories; Hard disks; High definition video; Memory management; Writing;
fLanguage
English
Journal_Title
Consumer Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0098-3063
Type
jour
DOI
10.1109/TCE.2013.6689689
Filename
6689689
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