• DocumentCode
    3371796
  • Title

    A design of transition between microstrip line and semiconductor devices with gold-bonding wire

  • Author

    Ma, Tianye ; Jiang, Yuan ; Fan, Yong ; Lin, Xianqi ; Zhu, Zhongbo

  • Author_Institution
    Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2011
  • fDate
    1-3 Nov. 2011
  • Firstpage
    303
  • Lastpage
    305
  • Abstract
    Gold-bonding wires have been frequently used in connecting semiconductor devices and microstrip lines. This paper presents a design of transition between microstrip line and semiconductor device with gold-bonding wire. As the material and shape of the loop has already been discussed in other researches, this paper concentrates on the positions of the solders and the height of the chip. The results of the simulations indicate that if the solders locate beside the edge of the microstrip line, and the height of chip is appropriate designed, less insertion loss can be expected.
  • Keywords
    design; microstrip lines; semiconductor devices; design; gold-bonding wire; microstrip line; semiconductor devices; Bonding; Current density; Gold; Insertion loss; Microstrip; Substrates; Wires; gold-bonding wire; insertion loss; microstrip line;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-8265-8
  • Type

    conf

  • DOI
    10.1109/MAPE.2011.6156217
  • Filename
    6156217