DocumentCode
3371796
Title
A design of transition between microstrip line and semiconductor devices with gold-bonding wire
Author
Ma, Tianye ; Jiang, Yuan ; Fan, Yong ; Lin, Xianqi ; Zhu, Zhongbo
Author_Institution
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2011
fDate
1-3 Nov. 2011
Firstpage
303
Lastpage
305
Abstract
Gold-bonding wires have been frequently used in connecting semiconductor devices and microstrip lines. This paper presents a design of transition between microstrip line and semiconductor device with gold-bonding wire. As the material and shape of the loop has already been discussed in other researches, this paper concentrates on the positions of the solders and the height of the chip. The results of the simulations indicate that if the solders locate beside the edge of the microstrip line, and the height of chip is appropriate designed, less insertion loss can be expected.
Keywords
design; microstrip lines; semiconductor devices; design; gold-bonding wire; microstrip line; semiconductor devices; Bonding; Current density; Gold; Insertion loss; Microstrip; Substrates; Wires; gold-bonding wire; insertion loss; microstrip line;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on
Conference_Location
Beijing
Print_ISBN
978-1-4244-8265-8
Type
conf
DOI
10.1109/MAPE.2011.6156217
Filename
6156217
Link To Document