DocumentCode
3371986
Title
A failure rate based methodology for determining the maximum operating gate electric field, comprehending defect density and burn-in
Author
Hunter, William R.
Author_Institution
Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA
fYear
1996
fDate
April 30 1996-May 2 1996
Firstpage
37
Lastpage
43
Abstract
We develop a new and accurate methodology for determining the maximum allowed operating gate electric field E/sub max/. It is based on achieving a failure rate requirement throughout the required product lifetime. The method is general, and rigorously comprehends the field dependence, an arbitrary defect density tail; and burn-in. We demonstrate the power of this technique with the first systematic study of the impact of defect density tail shape and field dependence on E/sub max/. The defect density tail slope s/sub d/ determines distinctly different behavior depending on whether s/sub d/<1 or s/sub d/>1. Of greatest significance, we show that in general it is not possible, a priori, to determine whether a desired operating field is safe or not. This uncertainty arises primarily because we cannot know the behavior of the defect density tail below some practical observable lower limit of the cumulative failure distribution function F. This uncertainty must be comprehended in the risk management associated with decisions to increase E/sub op/.
Keywords
electric fields; failure analysis; integrated circuit reliability; burn-in; defect density; failure rate based methodology; field dependence; maximum operating gate electric field; Bismuth; Distribution functions; Instruments; Life estimation; Probability distribution; Risk management; Shape; Tail; Testing; Uncertainty;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location
Dallas, TX, USA
Print_ISBN
0-7803-2753-5
Type
conf
DOI
10.1109/RELPHY.1996.492059
Filename
492059
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