• DocumentCode
    3371986
  • Title

    A failure rate based methodology for determining the maximum operating gate electric field, comprehending defect density and burn-in

  • Author

    Hunter, William R.

  • Author_Institution
    Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    1996
  • fDate
    April 30 1996-May 2 1996
  • Firstpage
    37
  • Lastpage
    43
  • Abstract
    We develop a new and accurate methodology for determining the maximum allowed operating gate electric field E/sub max/. It is based on achieving a failure rate requirement throughout the required product lifetime. The method is general, and rigorously comprehends the field dependence, an arbitrary defect density tail; and burn-in. We demonstrate the power of this technique with the first systematic study of the impact of defect density tail shape and field dependence on E/sub max/. The defect density tail slope s/sub d/ determines distinctly different behavior depending on whether s/sub d/<1 or s/sub d/>1. Of greatest significance, we show that in general it is not possible, a priori, to determine whether a desired operating field is safe or not. This uncertainty arises primarily because we cannot know the behavior of the defect density tail below some practical observable lower limit of the cumulative failure distribution function F. This uncertainty must be comprehended in the risk management associated with decisions to increase E/sub op/.
  • Keywords
    electric fields; failure analysis; integrated circuit reliability; burn-in; defect density; failure rate based methodology; field dependence; maximum operating gate electric field; Bismuth; Distribution functions; Instruments; Life estimation; Probability distribution; Risk management; Shape; Tail; Testing; Uncertainty;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
  • Conference_Location
    Dallas, TX, USA
  • Print_ISBN
    0-7803-2753-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.1996.492059
  • Filename
    492059