• DocumentCode
    3372033
  • Title

    A study on the trade-off among wirelength, number of TSV and placement with different size of TSV

  • Author

    Tsai, Ming-Chao ; Hwang, TingTing

  • Author_Institution
    Dept. of Comput. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    25-28 April 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Through-Silicon Via (TSV) is a promising technology to reduce the length of interconnect in a three dimensional integrated circuit (3D-IC). However, the area overhead of TSV also poses a negative impact on a 3D-IC. Using too many TSVs will increase the die size and cancel out the benefit brought by TSV. Therefore, in this paper we will analyze the trade-off among wirelength and the number of TSVs with different TSV sizes. Since the number of TSVs is determined by placement, we also investigate how placement affects the wirelength and the number of TSVs. The experimental result shows that, in our study cases, the average maximum TSV area is 25.30% of the cell area. Beyond this value, virtually no wirelength reduction can be obtained.
  • Keywords
    integrated circuit interconnections; three-dimensional integrated circuits; 3D-IC; TSV; die size; interconnect; negative impact; three dimensional integrated circuit; through-silicon via; trade-off among wirelength; wirelength reduction; Algorithm design and analysis; Design automation; Partitioning algorithms; Routing; Three dimensional displays; Through-silicon vias; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    Pending
  • Print_ISBN
    978-1-4244-8500-0
  • Type

    conf

  • DOI
    10.1109/VDAT.2011.5783579
  • Filename
    5783579