Title :
A study on the trade-off among wirelength, number of TSV and placement with different size of TSV
Author :
Tsai, Ming-Chao ; Hwang, TingTing
Author_Institution :
Dept. of Comput. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Through-Silicon Via (TSV) is a promising technology to reduce the length of interconnect in a three dimensional integrated circuit (3D-IC). However, the area overhead of TSV also poses a negative impact on a 3D-IC. Using too many TSVs will increase the die size and cancel out the benefit brought by TSV. Therefore, in this paper we will analyze the trade-off among wirelength and the number of TSVs with different TSV sizes. Since the number of TSVs is determined by placement, we also investigate how placement affects the wirelength and the number of TSVs. The experimental result shows that, in our study cases, the average maximum TSV area is 25.30% of the cell area. Beyond this value, virtually no wirelength reduction can be obtained.
Keywords :
integrated circuit interconnections; three-dimensional integrated circuits; 3D-IC; TSV; die size; interconnect; negative impact; three dimensional integrated circuit; through-silicon via; trade-off among wirelength; wirelength reduction; Algorithm design and analysis; Design automation; Partitioning algorithms; Routing; Three dimensional displays; Through-silicon vias; Topology;
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8500-0
DOI :
10.1109/VDAT.2011.5783579