4.5 kV soft recovery diode with carrier stored structure

Author

Satoh, K. ; Nakagawa, T. ; Morishita, K. ; Koga, S. ; Kawakami, A.

Author_Institution

Mitsubishi Electr. Corp., Fukuoka City, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

313

Lastpage

316

Abstract

In terms of recovery performance, freewheeling high voltage diodes have two problems: low di/dt capability and the oscillation of both anode voltage and anode current. In order to prevent the oscillation, a soft recovery performance is required, but this alone is not sufficient. However, a carrier stored diode with comb-like N⁺ structure was thought to minimize the oscillation. This diode produced a recovery performance which was near the theoretically predicted level. Considerations for the triggering of the oscillation and the dynamic characteristics data of the comb-like N⁺ diode is presented

Keywords

anodes; oscillations; power semiconductor diodes; semiconductor device models; semiconductor device testing; anode current oscillation; anode voltage oscillation; carrier stored diode; carrier stored structure; comb-like N⁺ diode; comb-like N⁺ structure; diode recovery performance; dynamic characteristics; freewheeling high voltage diodes; oscillation minimization; oscillation triggering; recovery performance; soft recovery diode; soft recovery performance; Anodes; Circuit simulation; Cities and towns; Diodes; Power engineering and energy; RLC circuits; Solid modeling; Switches; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702696

Filename

702696