Title :
Quaternary InP-based layers grown in the 12×4" multiwafer planetary
Author :
Schmitt, T. ; Deufel, M. ; Christiansen, K. ; Hofeldt, J. ; Marsan, D.
Author_Institution :
Aixtron AG, Aachen, Germany
fDate :
31 May-4 June 2004
Abstract :
The performance of 12×4" AIX2600G3 planetary reactor is demonstrated by growth of InP based material. Results show that this planetary reactor is not only an excellent tool for AlGaInP LED mass production but also has the flexibility to achieve best results for InP-based layers. The excellent PL uniformity reflects the well tuned on wafer temperature, the run to run results prove the stability of the reactor.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor quantum wells; 12×4" AIX2600G3 planetary reactor; AlGaInP LED mass production; GaInAsP; PL uniformity; multiwafer planetary; Extraterrestrial measurements; Hardware; Indium phosphide; Inductors; Mass production; Quantum well devices; Satellites; Temperature; Testing; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442780
