DocumentCode :
3372540
Title :
Absorption saturation intensity of InGaAs-InAlAs MQW under tensile and compressive strain
Author :
Okuno, Tsuyoshi ; Masumoto, Yasuaki ; Higuchi, Akira ; Yoshino, Hideo ; Bando, Hiroyuki ; Okamoto, Hiroshi
Author_Institution :
Fac. of Eng., Chiba Univ., Japan
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
560
Lastpage :
561
Abstract :
Optical absorption saturation intensity Is was measured by using femtosecond light pulse for InxGa1-xAs-In0.52Al0.48As MQW grown on InP (100) substrates. Is showed minimum at x=0.46 (under tensile strain). This was in marked contrast to the previous results.
Keywords :
III-V semiconductors; aluminium compounds; compressive strength; gallium arsenide; high-speed optical techniques; indium compounds; optical saturable absorption; piezo-optical effects; semiconductor quantum wells; tensile strength; InxGa1-xAs-In0.52Al0.48As; InP; compressive strain; multiple quantum well; optical absorption saturation intensity; tensile strain; Absorption; Nonlinear optical devices; Nonlinear optics; Optical buffering; Optical devices; Optical saturation; Pulse measurements; Quantum well devices; Tensile strain; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442783
Filename :
1442783
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3372540
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