• DocumentCode
    3372540
  • Title

    Absorption saturation intensity of InGaAs-InAlAs MQW under tensile and compressive strain

  • Author

    Okuno, Tsuyoshi ; Masumoto, Yasuaki ; Higuchi, Akira ; Yoshino, Hideo ; Bando, Hiroyuki ; Okamoto, Hiroshi

  • Author_Institution
    Fac. of Eng., Chiba Univ., Japan
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    560
  • Lastpage
    561
  • Abstract
    Optical absorption saturation intensity Is was measured by using femtosecond light pulse for InxGa1-xAs-In0.52Al0.48As MQW grown on InP (100) substrates. Is showed minimum at x=0.46 (under tensile strain). This was in marked contrast to the previous results.
  • Keywords
    III-V semiconductors; aluminium compounds; compressive strength; gallium arsenide; high-speed optical techniques; indium compounds; optical saturable absorption; piezo-optical effects; semiconductor quantum wells; tensile strength; InxGa1-xAs-In0.52Al0.48As; InP; compressive strain; multiple quantum well; optical absorption saturation intensity; tensile strain; Absorption; Nonlinear optical devices; Nonlinear optics; Optical buffering; Optical devices; Optical saturation; Pulse measurements; Quantum well devices; Tensile strain; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442783
  • Filename
    1442783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3372540