Algorithm for yield driven correction of layout

As the development of VLSI technique, the critical dimension of IC has become smaller than the exposure wavelength. Due to the diffraction and interaction of optical waves, deformations between the image on wafer and the feature on layout are undeniable. This results in bad performance or even invalid circuits of the chips. OPC is critical compensation technique to correct the deformations on wafer images. This work presents a layout correction and optimization algorithm called MOPC; it´s a flexible and efficient core for the model-based OPC system. Since we divide the target features into different types before correction, the OPE between the target features and the environment features and the OPE between the neighboring segments of the inside feature are both considered during the correction.