DocumentCode
3372695
Title
Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s
Author
Fukano, Hideki ; Tamura, Munehisa ; Yamanaka, Takayuki ; Nakajima, Hiroki ; Akage, Yuichi ; Kondo, Yasuhiro ; Saitoh, Tadashi
Author_Institution
NTT Photonics Lab., NTT Corp., Kanagawa, Japan
fYear
2004
fDate
31 May-4 June 2004
Firstpage
573
Lastpage
576
Abstract
40 Gbit/s InGaAlAs/InAlAs electroabsorption modulators driven by a Vpp as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by means of a sophisticated device design that optimizes the extinction and bandwidth.
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; optical communication equipment; optical design techniques; optical fabrication; 1.1 V; 40 Gbit/s; InGaAlAs-InAlAs; device bandwidth; device design; device extinction; driving-voltage; electroabsorption modulators; Bandwidth; Excitons; Extinction ratio; Optical modulation; Optical transmitters; Optical waveguides; Poisson equations; Quantum well devices; Time division multiplexing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442790
Filename
1442790
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