Monolithic integration of passive RF components by MEMS

Author

Yamane, Daisuke ; Toshiyoshi, Hiroshi

Author_Institution

Res. Center for Adv. Sci. & Technol. (RCAST), Univ. of Tokyo, Tokyo, Japan

fYear

2011

fDate

25-28 April 2011

Firstpage

1

Lastpage

4

Abstract

A novel design of switched-line RF-MEMS (radio frequency micro electro mechanical systems) phase shifter for the X-Ku band (8 ~ 18 GHz) has been successfully developed by monolithically integrating electrostatic micro actuation mechanism of MEMS with a movable coplanar waveguide made of single crystalline silicon. MEMS and RF designs have been performed with minimum geometrical conflicts thanks to the layer-wise functional allocation method, where double surfaces of SOI (silicon on insulator) wafer are used. We have successfully demonstrated the design principle on a 1-bit phase shifter of 22.5 degrees at 12 ~ 13 GHz and obtained insertion loss of 1.6 ~ 18 dB/bit, return loss of -9 ~ 12 dB, and isolation of -52 ~ -55 dB by the electrostatic operation under 40 V.

Keywords

coplanar waveguides; micromechanical devices; microwave switches; phase shifters; radiofrequency integrated circuits; silicon-on-insulator; SOI wafer; X-Ku band; coplanar waveguide; electrostatic microactuation mechanism; frequency 12 GHz to 13 GHz; frequency 8 GHz to 18 GHz; geometrical conflict; layer-wise functional allocation method; monolithic integration; passive RF component; phase shifter; radio frequency microelectromechanical system; silicon on insulator; single crystalline silicon; switched-line RF-MEMS; voltage 40 V; Actuators; Electromagnetic waveguides; Gold; Insertion loss; Phase shifters; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

Pending

Print_ISBN

978-1-4244-8500-0

Type

conf

DOI

10.1109/VDAT.2011.5783615

Filename

5783615