DocumentCode
337307
Title
Semiconductor microwave device in HSRI of China
Author
Songfa, Li
Author_Institution
Hebei Semicond. Res. Inst., China
Volume
1
fYear
1998
fDate
1998
Firstpage
149
Abstract
The paper introduces some progress on semiconductor microwave devices in the Hebei Semiconductor Research Institute (HSRI) of China. The scope of this paper includes silicon power transistors, A3B5 materials and devices, InP crystals, GaAs and InP based heterostructure epi-wafers, power microwave transistors and MMICs as well as various 8 mm monolithic ICs
Keywords
III-V semiconductors; MIMIC; MMIC; microwave devices; semiconductor devices; 8 mm; China; GaAs; GaAs based heterostructure epi-wafers; HSRI; Hebei Semiconductor Research Institute; InP; InP based heterostructure epi-wafers; InP crystals; MM-wave monolithic ICs; MMICs; Si; Si power transistor; power microwave transistors; semiconductor microwave devices; Crystalline materials; Crystals; Gallium arsenide; Indium phosphide; MMICs; Microwave devices; Microwave transistors; Power transistors; Semiconductor materials; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium
Conference_Location
Kharkov
Print_ISBN
0-7803-5553-9
Type
conf
DOI
10.1109/MSMW.1998.758932
Filename
758932
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