DocumentCode
337309
Title
Thesis´s About Gunn Diode Work With Two Transit-time Regions And Heterojunction Between Them
Author
Storozhenko, I.
Volume
1
fYear
1998
fDate
1998
Firstpage
157
Lastpage
158
Keywords
Cathodes; Frequency; Gallium arsenide; Gunn devices; Heterojunctions; Power generation; Semiconductor diodes; Semiconductor process modeling; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium
Print_ISBN
0-7803-5553-9
Type
conf
DOI
10.1109/MSMW.1998.758935
Filename
758935
Link To Document