Stress in high rate deposited silicon dioxide films for MCM applications

Author

Haque, M.S. ; Naseem, H.A. ; Brown, W.D.

Author_Institution

High Density Electron. Center, Arkansas Univ., Fayetteville, AR, USA

fYear

1996

fDate

April 30 1996-May 2 1996

Firstpage

274

Lastpage

280

Abstract

Thick PECVD silicon dioxide (SiO/sub 2/) films were deposited at 1000 /spl Aring//min in the 250-350/spl deg/C temperature range for multichip module (MCM) applications. A considerable change in the stress values of these films was observed after annealing in the 250-400/spl deg/C range. The stress of as-deposited and annealed films were monitored for two months in a clean room environment. The moisture absorption diffusion coefficients of these high rate deposited films were found to be high. A considerable difference in the stress behavior of unannealed and annealed films was observed during shelf storage. The observed stress behavior is correlated with silanol (SiOH) and SiH content in the films.

Keywords

annealing; dielectric thin films; internal stresses; moisture; multichip modules; plasma CVD coatings; silicon compounds; stress effects; thick films; 250 to 400 C; MCM applications; SiH; SiH content; SiO/sub 2/; SiOH; annealing; high rate deposited films; moisture absorption diffusion coefficients; multichip module; shelf storage; silanol content; stress behavior; stress values; thick PECVD SiO/sub 2/ films; Absorption; Annealing; Compressive stress; Integrated circuit interconnections; Moisture; Multichip modules; Plasma temperature; Semiconductor films; Silicon compounds; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International

Conference_Location

Dallas, TX, USA

Print_ISBN

0-7803-2753-5

Type

conf

DOI

10.1109/RELPHY.1996.492130

Filename

492130