DocumentCode
3373471
Title
A new purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
Author
Leang, S.E. ; Chan, D.S.H. ; Chim, W.K.
Author_Institution
Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
fYear
1996
fDate
April 30 1996-May 2 1996
Firstpage
311
Lastpage
317
Abstract
A new charge-pumping technique to extract the spatial distribution of hot-carrier-induced interface states and trapped charges in MOS devices is proposed. This method is purely experimental and does not require simulation, and therefore can be applied to any MOSFET without the detailed knowledge of the device´s structure. With this method, one is able to gain a better understanding of the degradation mechanisms taking place during hot-carrier stress.
Keywords
MOSFET; electron traps; hot carriers; interface states; semiconductor device testing; MOS devices; MOSFETs; charge-pumping technique; degradation mechanisms; hot-carrier stress; hot-carrier-induced interface states; spatial distribution extraction; trapped charges; Charge carrier processes; Charge pumps; Degradation; Doping; Failure analysis; Hot carriers; Interface states; MOSFET circuits; Stress; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location
Dallas, TX, USA
Print_ISBN
0-7803-2753-5
Type
conf
DOI
10.1109/RELPHY.1996.492136
Filename
492136
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