A new substrate model and parameter extraction method for DNW RF MOSFETs

Author

Liu, Jun ; Sun, Lingling ; Yu, Zhiping ; Condon, Marissa

Author_Institution

Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China

fYear

2010

fDate

May 30 2010-June 2 2010

Firstpage

2478

Lastpage

2481

Abstract

A new compact model for the substrate network of RF MOSFETs with deep n-well (DNW) implantation is presented. A novel test structure proposed in is employed to directly access the characteristics of the substrate in two-port measurements for the extraction of substrate network components. A method is developed to analytically extract the parameters for the substrate network from two-port measurements. The methodology is verified and validated by the excellent match between the measured and simulated output admittances for a 64-finger DNW n-MOSFET in common-source configuration.

Keywords

MOSFET; semiconductor device testing; substrates; DNW RF MOSFET; compact model; deep n-well implantation; parameter extraction; substrate model; substrate network component; test structure; two-port measurement; CMOS technology; Capacitance; Circuit testing; Equivalent circuits; Immune system; Isolation technology; MOSFETs; Parameter extraction; Radio frequency; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Conference_Location

Paris

Print_ISBN

978-1-4244-5308-5

Electronic_ISBN

978-1-4244-5309-2

Type

conf

DOI

10.1109/ISCAS.2010.5537128

Filename

5537128