Extraction of the base and emitter resistances in bipolar transistors using an accurate base resistance model

Author

Ingvarson, Fredrik ; Linder, Martin ; Jeppson, Kjell O.

Author_Institution

Solid State Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2002

fDate

8-11 April 2002

Firstpage

71

Lastpage

75

Abstract

A straightforward method for extracting the base and emitter resistances is presented. The method has the following properties: 1) only a standard forward Gummel measurement on one transistor is required, 2) current-crowding and conductivity-modulation in the base are accounted for through the use of an accurate base resistance model, and 3) the resistance parameters are extracted using a non-linear optimization step. Furthermore, a technique for extraction of the high-injection parameters of a modified collector current model is also presented.

Keywords

bipolar transistors; semiconductor device models; Gummel measurement; base resistance; base resistance model; bipolar transistor; collector current model; conductivity modulation; current crowding; emitter resistance; high-injection parameters; nonlinear optimization; parameter extraction; Bipolar transistors; Circuit testing; Conductivity measurement; Current measurement; Data mining; Electrical resistance measurement; Measurement standards; Optimization methods; Semiconductor device modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on

Print_ISBN

0-7803-7464-9

Type

conf

DOI

10.1109/ICMTS.2002.1193174

Filename

1193174