Process variation compensation of a 4.6 GHz LNA in 65nm CMOS

Author

Mukadam, Mustansir Yunus ; Filho, Oscar Gouveia ; Zhang, Xuan ; Apsel, Alyssa B.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2010

fDate

May 30 2010-June 2 2010

Firstpage

2490

Lastpage

2493

Abstract

We present the design of a 4.6 GHz LNA in TSMC 65nm with a feedback scheme to compensate for variations across process, supply voltage, and temperature. No post fabrication efforts are required in this compensation method. The proposed method improves the variation in S₂₁ of an inductively degenerated cascode LNA from 8.75% to 1.27%, which is a reduction in variation of 85%. The presented scheme is also robust over variations in supply voltage, temperature, and process conditions. The compensation method presented can be utilized to stabilize the gain of a wide variety of amplifiers.

Keywords

CMOS integrated circuits; feedback amplifiers; low noise amplifiers; nanoelectronics; CMOS; LNA; TSMC; amplifiers; feedback scheme; frequency 4.6 GHz; process variation compensation; size 65 nm; CMOS process; Capacitance; Fabrication; Impedance matching; Manufacturing processes; Noise figure; Radio frequency; Temperature; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Conference_Location

Paris

Print_ISBN

978-1-4244-5308-5

Electronic_ISBN

978-1-4244-5309-2

Type

conf

DOI

10.1109/ISCAS.2010.5537131

Filename

5537131