Title :
A comparative study of the quasi-saturation in the high voltage vertical DMOS for different cell geometries
Author :
Zhu, Ronghua ; Chow, T.P.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The quasi-saturation behaviour of the high voltage vertical power DMOSFET is studied for the stripe, hexagonal and atomic-lattice-layout designs. The experimental results show that the device enters into quasi-saturation at different gate voltages for these cell designs. Numerical device simulations show that it is due to different JFET and drift-region resistances associated with these designs
Keywords :
electric resistance; numerical analysis; power MOSFET; semiconductor device models; semiconductor device testing; JFET resistance; atomic-lattice-layout design; device quasi-saturation; drift-region resistance; gate voltages; hexagonal design; high voltage vertical DMOSFET; high voltage vertical power DMOSFET; quasi-saturation; quasi-saturation behaviour; stripe design; vertical DMOS cell geometries; Circuit simulation; Geometry; MOSFET circuits; Manufacturing; Numerical simulation; Power MOSFET; Power electronics; Switches; Switching circuits; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702708
