Title :
Computer Simulation of Gamma Irradiation Energy Deposition in Mosfet Dosimeters
Author :
Stankovic, S.J. ; Ilic, R.D. ; Osmokrovic, P. ; Loncar, B. ; Vasic, A.
Author_Institution :
Radiat. Protection Dept., Vinca Inst. of Nucl. Sci., Belgrade
Abstract :
The application of the MOSFET as detectors or device components in Power Pulse Technique (PPT) requires investigation of their characteristics in the radiation fields. Limitations in measurement of MOSFET detector characteristics are successfully overcomed using Monte Carlo program for simulation of the radiation transport through the detector structure. In this paper the application possibilities of prestige FOTELP and PENELOPE programs for computation of the deposited energy and doze distribution in the sensitive volume of MOSFET were presented.
Keywords :
MOSFET; Monte Carlo methods; dosimeters; gamma-rays; MOSFET detector; MOSFET dosimeters; Monte Carlo program; gamma irradiation energy deposition; power pulse technique; Application software; Computer simulation; Distributed computing; Energy measurement; Geometry; MOSFET circuits; Monte Carlo methods; Power MOSFET; Radiation detectors; Silicon;
Conference_Titel :
Pulsed Power Conference, 2005 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-9189-6
Electronic_ISBN :
0-7803-9190-x
DOI :
10.1109/PPC.2005.300699
