Title :
Phosphorus-implanted high-voltage n+p 4H-SiC junction rectifiers
Author :
Patel, R. ; Khemka, V. ; Ramungul, N. ; Chow, T.P. ; Ghezzo, M. ; Kretchmer, J.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
In this paper, we report the fabrication and characterization of phosphorus-implanted 4H-SiC n+/p junction rectifiers. Sheet resistance measurements of the implanted layers indicated values as low as 160 Ω/□. The forward characteristics of these diodes obey a generalized Shockley-Noyce-Sah (SNS) multiple-trap recombination model with 4 shallow levels and 1 deep level. Close-to-ideal avalanche breakdown voltage with a positive temperature coefficient is observed. The high-level injection lifetime has been extracted to characterize the switching behaviour of these diodes
Keywords :
avalanche breakdown; carrier lifetime; deep levels; doping profiles; electric resistance; electron-hole recombination; ion implantation; phosphorus; power semiconductor diodes; semiconductor device models; semiconductor device testing; semiconductor materials; silicon compounds; solid-state rectifiers; P-implanted high-voltage n+p 4H-SiC junction rectifiers; SiC:P; avalanche breakdown voltage; deep level; diode forward characteristics; diode switching behaviour; generalized Shockley-Noyce-Sah multiple-trap recombination model; high-level injection lifetime; high-voltage n+p 4H-SiC junction rectifiers; implanted layers; phosphorus implantation; phosphorus-implanted 4H-SiC n+/p junction rectifiers; positive temperature coefficient; shallow levels; sheet resistance; Annealing; Atomic layer deposition; Doping; Fabrication; Implants; Nitrogen; Plasma temperature; Rectifiers; Semiconductor diodes; Silicon carbide;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702724
