DocumentCode :
3375213
Title :
Effect of body biasing on embedded SRAM failure
Author :
Khajeh, Amin ; Eltawil, Ahmed M. ; Kurdahi, Fadi J.
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Univ. of California Irvine, Irvine, CA, USA
fYear :
2010
fDate :
May 30 2010-June 2 2010
Firstpage :
2350
Lastpage :
2353
Abstract :
This paper studies the tradeoffs when using body biasing as a power consumption modulator for Static Random Access Memories (SRAM) in term of reliability versus power consumption. We show that for fault tolerant applications such as wireless applications and multimedia, utilizing body biasing combined with voltage scaling can result in up to 47% power saving compared to the nominal case, while, for the same scenario, utilizing only voltage scaling will result in 20% power saving in the memory compared to nominal case.
Keywords :
SRAM chips; integrated circuit reliability; body biasing effect; embedded SRAM failure; multimedia; power consumption modulator; static random access memories; wireless applications; Application software; Circuits; Delay; Energy consumption; Frequency; Random access memory; Signal to noise ratio; Streaming media; Tuning; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
Type :
conf
DOI :
10.1109/ISCAS.2010.5537193
Filename :
5537193
Link To Document :
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