DocumentCode
3375314
Title
Influence of lateral borders length on current voltage characteristics and oscillation efficiency of planar diode
Author
Prokhorov, E.D. ; Botsula, O.V. ; Reutina, O.A.
Author_Institution
V.N. Karazin Kharkiv Nat. Univ., Kharkiv, Ukraine
fYear
2013
fDate
23-28 June 2013
Firstpage
280
Lastpage
282
Abstract
Operation principles of diodes with lateral borders which possess difference mobility have been described earlier. Lateral borders can be represented by tunnel border (TB), resonant-tunnel border (RTB), heteroborder (HB), etc. Diodes with lateral boundaries can be fabricated in a “sandwich” structure, based on n-type semiconductor grown on heavily doped n+ - substrate, or in a planar structure based on n-type semiconductor, grown on semi-insulating (i) substrate.
Keywords
resonant tunnelling devices; semiconductor diodes; RTB; current voltage characteristic; heteroborder; lateral border length; n-type semiconductor; oscillation efficiency; planar diode; resonant-tunnel border; semiinsulating substrate; Anodes; Cathodes; Oscillators; Resistance; Resonant tunneling devices; Semiconductor diodes; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2013 International Kharkov Symposium on
Conference_Location
Kharkiv
Print_ISBN
978-1-4799-1066-3
Type
conf
DOI
10.1109/MSMW.2013.6622027
Filename
6622027
Link To Document