Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure

Author

Koga, Takeharu ; Yamazaki, Kazuaki ; Wakimoto, Hiroki ; Takahashi, Yoshikazu ; Kirihata, Humiaki ; Seki, Yasukazu

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

437

Lastpage

440

Abstract

A 2.5k V-1.8 kA advanced type power pack IGBT has been developed using an original multi-collector structure. From this multi-collector structure, we can drastically reduce the thermal stress occurring during the power cycling test. In addition to the mechanical ruggedness, the high turn-off capability of collector current I_c=6600 A, peak collector voltage V_c(peak)=2400 V, junction temperature T_j=125°C and the wide SCSOA of V_cc=1800 V, I _c=10000 A, T_j=125°C, t_w=15 μs are realized. This high electrical ruggedness is obtained by decreasing the operational imbalance between chips

Keywords

insulated gate bipolar transistors; power bipolar transistors; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; thermal stresses; 10000 A; 125 C; 15 mus; 1800 V; 2400 V; 6600 A; SCSOA; collector current; electrical ruggedness; junction temperature; mechanical ruggedness; multi-collector structure; operational imbalance; peak collector voltage; power cycling test; power pack IGBT; reliability; ruggedness; thermal stress; turn-off capability; Assembly; Diodes; Insulated gate bipolar transistors; Inverters; Packaging; Power system reliability; Research and development; Testing; Thermal resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702739

Filename

702739