Millimeter-wave CMOS device modeling and simulation

Challenges for modeling and simulating active and passive 130 nm CMOS devices at mm-wave frequencies (>30 GHz) are discussed. Small-signal lumped circuits with appropriate parasitic elements are used to model the active transistor devices with excellent broadband accuracy. Passive element transmission lines are discussed as generic scalable reactive elements suitable for forming resonant circuits with intrinsic transistor capacitance. The trade-offs between physical and electrical circuit models for the transmission lines are presented. Our approach demonstrates that relatively simple models can be used to accurately predict the small-signal performance of CMOS active and passive devices from DC up to mm-wave frequencies.