A Depletion Layer Actuator

Author

Ransley, James H T ; Durkan, Colm ; Seshia, Ashwin A.

Author_Institution

Cambridge Univ., Cambridge

fYear

2007

fDate

10-14 June 2007

Firstpage

1393

Lastpage

1396

Abstract

The uncompensated donor or acceptor atoms present within the depletion layer of a diode can be employed in an electrostatic actuator which utilizes the force between them and their opposing charges on the other side of the junction. In this paper we describe the theory of such a depletion layer actuator and demonstrate its application for the simple case of a diode located on the top surface of a cantilever resonator. Good agreement between the experimental results and the theory is obtained. These devices offer a new route for the integration of MEMS resonators with CMOS processing.

Keywords

CMOS integrated circuits; cantilevers; electrostatic actuators; micromechanical devices; resonators; semiconductor diodes; CMOS processing; MEMS resonators; cantilever resonator; depletion layer actuator; diode; electrostatic actuator; CMOS process; Capacitors; Dielectric devices; Dielectrics and electrical insulation; Electrostatic actuators; Micromechanical devices; P-n junctions; Semiconductor diodes; Silicon; Stress; Actuators; CMOS Compatible Micromechanical Resonators; Cantilevers; MEMS Oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300403

Filename

4300403