Title :
A Depletion Layer Actuator
Author :
Ransley, James H T ; Durkan, Colm ; Seshia, Ashwin A.
Author_Institution :
Cambridge Univ., Cambridge
Abstract :
The uncompensated donor or acceptor atoms present within the depletion layer of a diode can be employed in an electrostatic actuator which utilizes the force between them and their opposing charges on the other side of the junction. In this paper we describe the theory of such a depletion layer actuator and demonstrate its application for the simple case of a diode located on the top surface of a cantilever resonator. Good agreement between the experimental results and the theory is obtained. These devices offer a new route for the integration of MEMS resonators with CMOS processing.
Keywords :
CMOS integrated circuits; cantilevers; electrostatic actuators; micromechanical devices; resonators; semiconductor diodes; CMOS processing; MEMS resonators; cantilever resonator; depletion layer actuator; diode; electrostatic actuator; CMOS process; Capacitors; Dielectric devices; Dielectrics and electrical insulation; Electrostatic actuators; Micromechanical devices; P-n junctions; Semiconductor diodes; Silicon; Stress; Actuators; CMOS Compatible Micromechanical Resonators; Cantilevers; MEMS Oscillators;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location :
Lyon
Print_ISBN :
1-4244-0842-3
Electronic_ISBN :
1-4244-0842-3
DOI :
10.1109/SENSOR.2007.4300403
