Title :
Submilliamp long wavelength vertical cavity lasers
Author :
Margalit, Near M. ; Babic, Dubravko I. ; Streubel, Klaus ; Mirin, Richard P. ; Bowers, John E. ; Hu, Evelyn L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We demonstrate an improved laterally oxidized long wavelength (1.55-/spl mu/m) InGaAsP vertical cavity DBR QW laser. The devices exhibit the first submilliamp threshold current as well as the highest reported CW (64/spl deg/C) and pulsed (85/spl deg/C) operating temperatures.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser transitions; quantum well lasers; 1.55 mum; 64 C; 85 C; CW operating temperatures; InGaAsP; InGaAsP vertical cavity DBR QW laser; laterally oxidized; long wavelength; pulsed operating temperatures; submilliamp long wavelength vertical cavity lasers; submilliamp threshold current; Apertures; Etching; Fiber lasers; Gallium arsenide; Mars; Mirrors; Optical pulses; Oxidation; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553730
