DocumentCode
3377702
Title
Simulation of a green wafer fab featuring solar photovoltaic technology and storage system
Author
Sanders, L. ; Lopez, Sebastian ; Guzman, Giovanni ; Jimenez, Joaquin ; Tongdan Jin
Author_Institution
Ingram Sch. of Eng., Texas State Univ., San Marcos, TX, USA
fYear
2012
fDate
9-12 Dec. 2012
Firstpage
1
Lastpage
12
Abstract
A semiconductor wafer fab requires a significant amount of energy to maintain its daily operations. Solar photovoltaics (PV) is a clean and renewable technology that can be potentially used to power large wafer fabs. There exist some critical factors slowing the proliferation of facilities powered by PVs, including high capital costs and power output intermittency. This study investigates the reliability and the costs of operating a PV-based distributed generation (DG) system to generate renewable energy for wafer fabs. In addition to PVs, the DG system also features storage devices and a net metering function. We developed a simulation model to mimic the PV generation and load variability. The goal is to design a reliable and cost-effective PV-based DG system to mitigate carbon emissions. Two case studies are presented in this paper to demonstrate the performance of the proposed DG system for fabs located in Austin Texas, USA, and Dresden, Germany.
Keywords
environmental factors; photovoltaic power systems; power generation reliability; renewable energy sources; semiconductor industry; wafer bonding; PV generation; PV-based distributed generation; capital cost; carbon emission; green wafer fab; load variability; net metering function; power output intermittency; reliability; renewable technology; semiconductor wafer fab; solar photovoltaic technology; storage device; storage system; Batteries; Electricity; Load modeling; Mathematical model; Meteorology; Semiconductor device modeling; Substations;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation Conference (WSC), Proceedings of the 2012 Winter
Conference_Location
Berlin
ISSN
0891-7736
Print_ISBN
978-1-4673-4779-2
Electronic_ISBN
0891-7736
Type
conf
DOI
10.1109/WSC.2012.6465269
Filename
6465269
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