DocumentCode
3377951
Title
The influence of Na on elements diffusion of Cu(In,Ga)Se2 thin films
Author
Weilong, Jiang ; Li, Zhang ; Qing, He ; Fengyan, Li ; Zhiqiang, Zhou ; Wei, Liu ; Baozhang, Li ; Changjian, Li ; Yun, Sun
Author_Institution
Institute of Photo-electronics, Nankai University, Tianjin, China
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
4
Abstract
The influence of Na on structural properties of Cu(In,Ga)Se2 thin films on polyimide(PI) substrate by low temperature 3-stage coevaporation process is investigated. The interdiffusion of In and Ga is hindered in the presence of Na and lead to a decrease of grain size of CIGS near the substrate. Double-peak reflections are found in XRD data of CIGS thin films on substrates with Na. GIXRD data is used and shows a decrease of Ga-incorporation with depth. The problem above can be partly solved by reducing Ga/In ratio. Cross-section SEM micrograph of CIGS films grown with Na shows a smaller grain size near the substrate.
Keywords
Grain size; Helium; Optical films; Optical reflection; Photovoltaic cells; Sputtering; Substrates; Temperature; Transistors; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922550
Filename
4922550
Link To Document