DocumentCode :
3378131
Title :
Nanoscale Al-Al and Cu-Cu Contacts
Author :
Liu, Qingquan ; McCormick, Daniel T. ; Roberts, Robert C. ; Tien, Norman C.
Author_Institution :
Case Western Reserve Univ., Cleveland
fYear :
2007
fDate :
10-14 June 2007
Firstpage :
1593
Lastpage :
1596
Abstract :
This paper reports that the forces needed to break Al and Cu native oxide are 0 to 3 muN, and 0 to 0.5 muN, respectively, remarkably less than the previously reported 0.1 N force requirement of breaking Al native oxide. Our modeling and experimental results indicate that nanoscale contact resistance is dominated by local hardening instead of contact force as in conventional contact theories. A microswitch featuring a 60 to 80 nm thick contact electrode is fabricated to demonstrate nanoscale Al contacts.
Keywords :
contact resistance; hardening; microelectrodes; microswitches; nanocontacts; Al; Cu; contact electrode fabrication; local hardening; microswitch; nanoscale contact resistance; native oxide layer; Actuators; CMOS technology; Contact resistance; Deformable models; Electrodes; Heat transfer; Microswitches; Semiconductor device modeling; Solid modeling; Temperature; Al; Contact resistance; Cu; MEMS switch; NEMS; asperity; nanoscale; native oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location :
Lyon
Print_ISBN :
1-4244-0842-3
Electronic_ISBN :
1-4244-0842-3
Type :
conf
DOI :
10.1109/SENSOR.2007.4300452
Filename :
4300452
Link To Document :
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